| Specifications | Microsoft Word - TIM1314-15UL_rev2.doc uchiyama |
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| Specifications | Microsoft Word - TIM1314-15UL_rev2.doc uchiyama |
| Business section |
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| Specifications | Microsoft Word - TIM1314-15UL_rev2.doc uchiyama |
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| Content | MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1314-15UL TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45 dBc at Pout= 30.0dBm G1dB=7.0 dB at 13.75 GHz to 14.5GHz Single Carrier Level BROAD BAND INTERNALLY MATCHED FET HIGH POWER HERMETICALLY SEALED PACKAGE P1dB=42.0dBm at 13.75GHz to 14.5GHz RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOLCONDITIONS UNITMIN. TYP.MAX. Output Power at 1dB Gain Compression Point P1dB dBm41.0 42.0⎯ Power Gain at 1dB Gain Compression Point G1dB dB 6.0 7.0 ⎯ Drain Current IDS1 A ⎯ 4.0 5.0 Gain Flatness ΔG dB ⎯ ⎯ ±0.8 Power Added Efficiency ηadd VDS= 10V IDSset≅ 4.0A f= 13.75 to 14.5GHz % ⎯ 32 ⎯ 3rd Order Intermodulation Distortion IM3 dBc -42 -45 ⎯ Drain Current IDS2 Two-Tone Test Po=30.0 dBm (Single Carrier Level) A ⎯ 4.0 5.0 Channel Temperature Rise ΔTch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C ⎯ ⎯ 80 Recommended gate resistance(Rg) : Rg= 100 Ωҏ(MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS SYMBOLCONDITIONS UNITMIN. TYP.MAX. Transconductance gm VDS= 3V IDS= 4.8A mS ⎯ 4000⎯ Pinch-off Voltage VGSoff VDS= 3V IDS= 145mA V -0.5 -2.0-4.5 Saturated Drain Current IDSS VDS= 3V VGS= 0V A ⎯ 8.0 ⎯ Gate-Source Breakdown Voltage VGSO IGS= -145μA V -5 ⎯ ⎯ Thermal Resistance Rth(c-c) Channel to Case °C/W⎯ 2.0 2.5 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. April, 2009 |
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