RPI-579N1E : Optical Sensors\r\n ROHM CO., LTD.

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Specifications	RPI-579N1E : Optical Sensors\r\n ROHM CO., LTD.
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RPI-579N1E Photointerrupter, General type Applications Printers Facsimiles AV equipment Features 1) Heat resistance (170°

Specifications	RPI-579N1E : Optical Sensors\r\n ROHM CO., LTD.
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Content	RPI-579N1E Photointerrupter, General type Applications Printers Facsimiles AV equipment Features 1) Heat resistance (170°C). 2) Small gap (0.5mm) and good accuracy. 3) Quick response time. 4) Filter against visible ray is built-in. 5) Kinked forming. Absolute maximum ratings (Ta=25°C) Electrical and optical characteristics (Ta=25°C) Electrical and optical characteristics curves Dimensions (Unit : mm) 6 0.5 0.8 1.6 (2.54) 2-0.45 Optical center Gap 7.5(1.45) 5 (10) 4-0.4 (4-0.85) 2.5 10 0.7±0.1 13.8 A A 3.6±0.4 2-φ0.7±0.1 14(Bottom) 2.35±0.16.6±0.1 5.2±0.1 6 Notes: 1. Unspecified tolerance shall be ±0.2 . 2. Measurement in the bracket is that of lead pin at base the mold. 3. Dimension in parenthesis are show for reference. 4. Please be carefully not to receive external disturbing light because the top and back face emitter and detector element isn t covered by case. Collector EmitterAnode Cathode Through hole 4-φ0.8 2- φ0.8 2.35 10 +0.05 −0 2.6 8.95 2.54 5.2 Fig.1 Relative output vs. distance ( ) RELATIVE COLLECTOR CURRENT : Ic (%) DISTANCE : d (mm) 034512 100 80 60 40 20 0 d Fig.4 Relative output vs. distance ( ) FORWARD CURRENT : IF (mA) AMBIENT TEMPERATURE : Ta (°C) −20−40010080604020 10 40 30 20 0 5 15 25 35 RELATIVE FORWARD VOLTAGE : VF (%) AMBIENT TEMPERATURE : Ta (°C) 0-10-20-30102030405060708090 0 20 40 60 80 100 120 140 Fig.5 Power dissipation / collector power dissipation vs. ambient temperature Fig.2 Forward current falloff Fig.9 Dark current vs. ambient temperature Fig.10 Output characteristics RELATIVE COLLECTOR CURRENT : Ic (%) DISTANCE : d (mm) 034512 100 80 60 40 20 0 d Fig.7 Collector current vs. forward current Fig.8 Response time vs. collector current RESPONSE TIME : t (µs) COLLECTOR CURRENT : Ic (µA) 10501002050010002002000 10 20 50 200 100 RL=5kΩ RL=1kΩ RL=2kΩ tr tf tr tf tf tr DARK CURRENT : ID (nA) AMBIENT TEMPERATURE : Ta (°C) 025507510025 1000 100 10 1 0.1 VCE=10V VCE=30V VCE=20V Fig.11 Response time measurement circuit td tr tf 10% 90% RL VCCInput Input Output Output td : tr : tf : Delay time Rise time (time for output current to rise from 10% to 90% of peak current) Fall time (time for output current to fall from 90% to 10% of peak current) COLLECTOR CURRENT : IC (mA) COLLECTOR-EMITTER VOLTAGE : VCE (V) 0 10 9 8 7 6 5 4 3 2 1 0 12345678910 COLLECTOR CURRENT : Ic (mA) FORWARD CURRENT : IF (mA) POWER DISSIPATION / COLLECTOR POWER DISSIPATION : PD / Pc (mW) AMBIENT TEMPERATURE : Ta (°C) 100 90 80 70 60 50 40 30 20 10 0 -40-20020406080100 FORWARD VOLTAGE : VF (V) FORWARD CURRENT : IF (mA) 0 5 10 15 20 25 30 35 00.511.522.5 0 0 2 4 6 8 10 5101520253035 IF=30mA I F=25mA I F=20mA I F=15mA I F=10mA I F=5mA Fig.3 Forward current vs. forward voltage Fig.6 Relative output vs. ambient temperature Parameter ∗ Non-coherent Infrared light emitting diode used. Peak light emitting wavelength Rise time Fall time Symbol V F IR ICEO λP λP IC VCE(sat) tr tf Min. − − − − 0.5 − − Typ. 1.4 − − 800 − 0.1 10 Max. 1.7 10 0.5 − − 0.5 − Unit VI F=10mA I F=10mA V R=5V V CE=10V − V CE=5V, IF=10mA I F=10mA, IC=0.1mA V CC=5V, IF=10mA, RL=100Ω µA µA nm mA V µs −10−µs −850−nm Conditions Forward voltage Reverse current Dark current Peak sensitivity wavelength Collector current Collector-emitter saturation voltage Response time Input charac- teristics Output charac- teristics Transfer characteristics Infrared light emitter diode − Maximum sensitivity wavelength λP − 800 − nm ∗ This product is not designed to be protected against electromagnetic wave. VCC=5V, IC=1mA, RL=100Ω tr tf Response time − 10 − µs Photo transistor ParameterSymbol I C VCEO PD VR IF PC VECO Topr Tstg Limits −25 to +85 −40 to +85 35 5 70 30 4.5 30 80 Unit mA V mW V V mA mW °C °C Tsol260 / 3°C / s Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature Soldering temperture Input (LED)Output photo- transistor() ∗ ∗ 1mm from the body bottom.
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