RPI-303 : Optical Sensors\r\n ROHM CO., LTD.

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Specifications	RPI-303 : Optical Sensors\r\n ROHM CO., LTD.
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RPI-303 Photointerrupter, Taller type Applications Reel count sensor for VCR DVD Features 1) Tall package (Optical axis 20.75

Specifications	RPI-303 : Optical Sensors\r\n ROHM CO., LTD.
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Content	RPI-303 Photointerrupter, Taller type Applications Reel count sensor for VCR DVD Features 1) Tall package (Optical axis 20.75mm). 2) Small package due to the double-layer mold. 3) PPS package for heat resistance. Absolute maximum ratings (Ta=25°C) Electrical and optical characteristics (Ta=25°C) Electrical and optical characteristics curves External dimensions (Unit : mm) ∗ This product is not designed to be protected against electromagnetic wave. Notes: 1. Unspecified tolerance shall be ±0.2 . 2. Dimension in parenthesis are show for reference. Through hole Emitter Collector Anode Cathode Optical axis center +0.1 0 R0.3 -0.2 +0 C0.3 2.7 0.2 4-φ0.84.2 1 1.9 5.7 2.5 1.41.7 3.5 1.5 0.5 0.2 17.4 2.5 4.2 1.7 1.2 2.3 6.3 7.3 3.0 22 17.45 (20.75)(4) (5.7) 4-0.2 1.5 (2.5) 4-0.5±0.1 11 3.6 2 (0.4) Min.2.1 slope 10˚ slope 1˚ slope 5˚ Fig.1 Relative output vs. distance ( ) Fig.4 Relative output vs. distance ( ) Fig.4 Power dissipation / collector power dissipation vs. ambient temperature Fig.2 Forward current falloff Fig.9 Dark current vs. ambient temperature Fig.10 Output characteristics Delay time Rise time (time for output current to rise from 10% to 90% of peak current) Fall time (time for output current to fall from 90% to 10% of peak current) td : tr : tf : Fig.11 Response time measurement circuit td tr tf 10% 90% RL VCCInput Input Output Output Fig.7 Collector current vs. forward current Fig.8 Response time vs. collector current Fig.3 Forward current vs. forward voltage Fig.5 Relative output vs. ambient temperature Parameter Cut-off frequency ∗ Non-coherent Infrared light emitting diode used. Peak light emitting wavelength Rise time Fall time Symbol V F IR ICEO λP λP IC fC VCE(sat) tr tf Min. − − − − 0.2 − − Typ. 1.3 − − 800 0.7 − 10 Max. 1.6 10 0.5 − 2.0 0.4 − Unit VI F=50mA I F=50mA V R=5V V CE=10V − V CE=5V, IF=20mA I F=20mA, IC=0.1mA V CC=5V, IC=1mA, RL=100Ω V CC=5V, IF=20mA, RL=100Ω µA µA nm mA V µs −10−µs −1−MHz −950−nm Conditions tr tf Response time − Maximum sensitivity wavelength λP − 800 − nm −10−µs Forward voltage Reverse current Dark current Peak sensitivity wavelength Collector current Collector-emitter saturation voltage Response time Input charac- teristics Output charac- teristics Transfer characteristics Photo transistor Infrared light emitter diode ParameterSymbol I C VCEO PD VR IF PC VECO Topr Tstg Limits −25 to +85 −30 to +85 50 5 80 30 4.5 30 80 Unit mA V mW V V mA mW °C °C Tsol260 / 3°C / s Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature Soldering temperture Input (LED)Output photo- transistor() ∗ ∗ 1.6mm from the body bottom. RESPONSE TIME : t (µs) COLLECTOR CURRENT : Ic (mA) 0.1110100 1 10 100 1000 VCC= 5V Ta= 25°C RL=1kΩ RL= 500Ω RL= 100Ω DARK CURRENT : ID (nA) AMBIENT TEMPERATURE : Ta (°C) 0255075100 −25 0.1 1 10 100 1000 VCE= 10V V CE= 20V V CE= 30V COLLECTOR CURRENT : Ic (mA) FORWARD CURRENT : IF (mA) 01020304050 0 0.4 0.8 1.2 1.6 2.0 VCE=5V COLLECTOR CURRENT : IC (mA) COLLECTOR-EMITTER VOLTAGE : VCE (V) 0 0.5 1 1.5 2 2.5 2046108 40mA 30mA 20mA 10mA I F=50mA 20020406080100 20 80 P D PC 100 120 60 40 0 RELATIVE COLLECTOR CURRENT : Ic (%) DISTANCE : d (mm) 00.51.01.52.03.02.5 100 75 50 25 0 d RELATIVE COLLECTOR CURRENT : Ic (%) AMBIENT TEMPERATURE : Ta (°C) 250255075100 100 50 0 RELATIVE COLLECTOR CURRENT : Ic (%) DISTANCE : d (mm) 01.02.04.03.0 100 50 25 75 0 d FORWARD CURRENT : IF (mA) AMBIENT TEMPERATURE : Ta (°C) −20020406080100 10 50 40 30 20 0 FORWARD VOLTAGE : VF (V) FORWARD CURRENT : IF (mA) 0 10 20 30 40 50 0.400.81.22.01.6 75°C 50°C 25°C 0°C 25°C
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