Specifications | RPI-221 : Optical Sensors\r\n ROHM CO., LTD. |
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Specifications | RPI-221 : Optical Sensors\r\n ROHM CO., LTD. |
Business section |
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Specifications | RPI-221 : Optical Sensors\r\n ROHM CO., LTD. |
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Content | RPI-221 Photointerrupter, Small type Applications Optical control equipment Cameras Floppy disk drives Features 1) Ultra-small. 2) Minimal influence from stray light. 3) Low collector-emitter saturation voltage. Absolute maximum ratings (Ta=25°C) Electrical and optical characteristics (Ta=25°C) Electrical and optical characteristics curves External dimensions (Unit : mm) Notes: 1. Unspecified tolerance shall be ±0.2 . 2. Dimension in parenthesis are show for reference. Cathode Emitter Gap Cross-section A-A Optical axis center Anode Through hole A A 2-R0.3 2-R0.15 C0.7 4.9±0.3 2.6 1.5 2.6 3.3 2.3±0.3 2 1 Min.5 (4) 4-0.2 10.5 4-0.5 4-0.4 (2) (0.5) 0.4 4 2 4-φ0.8 Fig.1 Relative output current vs. distance ( ) RELATIVE COLLECTOR CURRENT : Ic (%) DISTANCE : d (mm) 0.501.01.52.02.5 0 25 50 75 100 125 d Fig.4 Relative output current vs. distance ( ) RELATIVE COLLECTOR CURRENT : Ic (%) DISTANCE : d (mm) 0.501.01.52.02.5 0 25 50 75 100 125 d Fig.2 Forward current falloff FORWARD CURRENT : IF (mA) AMBIENT TEMPERATURE : Ta (°C) −20020406080100 10 50 40 30 20 0 Fig.10 Output characteristics COLLECTOR CURRENT : Ic (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 4861020 0 1.5 3.0 IF=50mA 40mA 30mA 20mA 10mA td tr tf 10% 90% RL VCC td : tr : tf : Delay time Rise time (time for output current to rise from 10% to 90% of peak current) Fall time (time for output current to fall from 90% to 10% of peak current) Input Input Output Output Fig.11 Response time measurement circuit Fig.8 Response time vs. collector current RESPONSE TIME : t (µs) COLLECTOR CURRENT : Ic (mA) 1000.1110 1 10 100 1000 Ta=25°C Vcc=5V RL=1kΩ RL=500Ω RL=100Ω Fig.9 Dark current vs. ambient temperature DARK CURRENT : ID (nA) AMBIENT TEMPERATURE : Ta (°C) −250255075100 0.1 1 10 100 1000 V CE =30V V CE =20V V CE =10V Fig.6 Relative output vs. ambient temperature RELATIVE COLLECTOR CURRENT : Ic (%) AMBIENT TEMPERATURE : Ta (°C) −40−20020406080100 0 20 40 60 80 100 120 160 140 Fig.7 Collector current vs. forward current COLLECTOR CURRENT : Ic (mA) FORWARD CURRENT : IF (mA) 01020304050 0 1 2 3 4 5 FORWARD VOLTAGE : VF (V) FORWARD CURRENT : IF (mA) Fig.3 Forward current vs. forward voltage 0.40.60.80.21.01.21.41.61.8 0°C 25°C 50°C 75°C 0 50 40 30 20 10 −25°C POWER DISSIPATION / COLLECTOR POWER DISSIPATION : PD / Pc (mW) AMBIENT TEMPERATURE : Ta (°C) Fig.5 Power dissipation / collector power dissipation vs. ambient temperature −20020 P D PC 406080100 0 20 40 60 80 100 120 ParameterSymbol V F IR ICEO λP IC VCE(sat) tr tf Min. − − − − 0.2 − − Typ. 1.3 − − 800 1.0 − 10 Max. 1.6 10 0.5 − − 0.4 − Unit VI F=50mA V R=5V V CE=10V − V CE=5V, IF=20mA I F=20mA, IC=0.1mA V CC=5V, IF=20mA, RL=100Ω µA µA nm mA V µs Conditions Forward voltage Reverse current Dark current Peak sensitivity wavelength Collector current Collector-emitter saturation voltage Response time Input charac- teristics Output charac- teristics Transfer charac- teristics Cut-off frequency ∗ Non-coherent Infrared light emitting diode used. Peak light emitting wavelength λP fC IF=50mA − −1−MHz − 950 − nm Maximum sensitivity wavelength λP − 800 − nm ∗ This product is not designed to be protected against electromagnetic wave. VCC=5V, IC=1mA, RL=100Ω tr tf Response time − 10 − µs Photo transistor Infrared lightemitterdiode ParameterSymbol I C VCEO PD VR IF PC VECO Topr Tstg Limits −25 to +85 −30 to +100 50 5 80 30 4.5 30 80 Unit mA V mW V V mA mW °C °C Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature Input (LED)Output photo- transistor() |
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Following Datasheets | rpi-222 (2 pages) rpi-243 (2 pages) rpi-246 (2 pages) rpi-303 (2 pages) rpi-352 (2 pages) rpi-392 (2 pages) rpi-441c1 (2 pages) rpi-5100 (2 pages) rpi-579 (2 pages) rpi-579n1 (2 pages) |
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