RPI-1031 : Optical Sensors\r\n ROHM CO., LTD.

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Specifications	RPI-1031 : Optical Sensors\r\n ROHM CO., LTD.
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RPI-1031 Applications DSC(Digital steal camera) DVC(Digital video camera) Digital handy phone, Fan herater, Projector Feature

Specifications	RPI-1031 : Optical Sensors\r\n ROHM CO., LTD.
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Content	RPI-1031 Applications DSC(Digital steal camera) DVC(Digital video camera) Digital handy phone, Fan herater, Projector Features 1) Surface Mount type 2) Optical Sensor 3) 4 Pirection Detector Absolute maximum ratings (Ta=25°C) Electrical and optical characteristics (Ta=25°C) Electrical and optical characteristics curves Dimensions (Unit : mm) Notes: 1. Unspecified tolerance shall be ±0.2 . 2. Dimension in parenthesis are show for reference. Surface Mount type 4 Direction Detector 1 3.9 3.92.4 0747D 31001 φ 0.8 Pattern Resist 3.7 3.7 1.9 0.9 Internal connection diagram Detector 2Detector 1 DC leakage current Ileok−− 15 VCE=5V, IF=5mAµA Stamp (year, week, day of the week) Mark side (Symbol of check in company) 1PIN mark EmitterEmitter 1 Collector 2Collector 1 Anode Cathode Fig.10 Response time measurement circuit Fig.1 Forward current falloff Fig.7 Response time vs. collector current Fig.9 Output characteristics Fig.8 Dark current vs. ambient temperature Fig.4 Relative output vs. ambient temperature Fig.3 Power dissipation / collector power dissipation vs. ambient temperature Fig.2 Forward current vs. forward voltage Fig.5 Collector current vs. forward current Fig.6 DC leakage current vs. forward current AMBIENT TEMPERATURE : Ta (°C) FORWARD CURRENT : IF (mA) FORWARD CURRENT : IF (mA) FORWARD VOLTAGE : VF (V) POWER DISSIPATION / COLLECTOR POWER DISSIPTION : PD/PC (mW) AMBIENT TEMPERATURE : Ta (°C) RELATIVE COLLECTOR CURRENT : Ic (%) AMBIENT TEMPERATURE : Ta (°C) COLLECTOR CURRENT : IC (mA) FORWARD CURRENT : IF (mA) DC LEAKAGE CURRENT : Ileak (mA) FORWARD CURRENT : IF (mA) LOAD RESISTANCE : RL (kΩ) RESPONSE TIME : tr (µs) 0.91.11.51.3 50 60 30 20 40 10 0 0402060 0 0.5 1 1.5 2 024681013579 0 0.5 1 1.5 2 2.5 10% 90% VOUT RL1 RIP VCCinput RL2 VOUT2 VOUT1 AMBIENT TEMPERATURE : Ta (°C) DARK CURRENT : ICEO (nA) COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE: VCE (V) −200502575100 80 100 40 60 20 0 0 0.08 0.07 0.06 0.05 0.04 0.03 0.01 0.02 0204060 −25−1052035506580 1.2 1 0.8 0.6 0.2 0.4 0 −200502575100 50 60 30 40 10 20 0 75−2525 0.01 10 0.1 10000 1000 100 1 010100 0 300 400 100 200 700 600 500 800 Parameter Cut-off frequency ∗ Non-coherent Infrared light emitting diode used. Peak light emitting wavelength Rise time Fall time Symbol V F IR ICEO λP λP IC fC VCE(sat) tr tf Min. − − − − 100 − − Typ. 1.3 − − 800 − − 10 Max. 1.6 10 0.5 − − 0.4 − Unit VI F=50mA I F=50mA V R=5V V CE=10V − − V CE=5V, IF=5mA I F=20mA, IC=0.1mA V CC=5V, IF=20mA, RL=100Ω µA µA µA nm V µs −10−µs −1−MHz −950−nm Conditions Maximum sensitivity wavelength λP − 800 − nm ∗ This product is not designed to be protected against electromagnetic wave. VCC=5V, IC=1mA, RL=100Ω tr tf Response time − 10 − µs Forward voltage Reverse current Dark current Peak sensitivity wavelength Collector current Collector-emitter saturation voltage Response time Input charac- teristics Output charac- teristics Transfer characteristics Photo transistor Infrared light emitter diode ParameterSymbol I C VCEO PD VR IF PC VECO Topr Tstg Limits −25 to +85 −30 to +85 50 5 80 30 4.5 30 80 Unit mA V mW V V mA mW °C °C Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature Input (LED) Output photo- transistor() tr tf IF=50mA IF=40mA IF=30mA IF=20mA IF=10mA IF=5mA
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