| Specifications | RPI-0129 : Optical Sensors ROHM CO,. LTD. |
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| Specifications | RPI-0129 : Optical Sensors ROHM CO,. LTD. |
| Business section |
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| Specifications | RPI-0129 : Optical Sensors ROHM CO,. LTD. |
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| Content | RPI-0129 Photointerrupter, Ultraminiature SMD type Applications DSC(Digital steal camera) DVC(Digital video camera) Digital handy phone Features 1) Ultraminiature SMD type. 2) Gap 1.2mm. Absolute maximum ratings (Ta=25°C) Electrical and optical characteristics (Ta=25°C) Electrical and optical characteristics curves Fig.1 Relative output current vs. distance ( ) DISTANCE : d (mm) 0 0.2 0.4 0.6 0.8 1.0 1.2 00.51.01.52.02.5 RELATIVE COLLECTOR CURRENT : Ic (%) Fig.4 Relative output current vs. distance ( ) Fig.2 Forward current falloff −20020406080100 10 50 40 30 20 0 AMBIENT TEMPERATURE : Ta (°C) FORWARD CURRENT : IF (mA) Fig.6 Relative output vs. ambienttemperature RELATIVE COLLECTOR CURRENT : Ic (%) AMBIENT TEMPERATURE : Ta (°C) −250255075100 100 80 60 40 20 0 VCE=5V IF=20mA0 0.2 0.4 0.6 0.8 1.0 1.2 00.51.01.52.0 DISTANCE : d (mm) RELATIVE COLLECTOR CURRENT : Ic (%)d Fig.3 Forward current vs. forwardvoltage FORWARD CURRENT : IF (mA) FORWARD VOLTAGE : VF (V) 0 10 20 30 40 50 0.40.20.60.81.01.21.41.61.8 75°C 50°C 25°C 0°C −25°C Fig.5 Power dissipation / collector power dissipation vs. ambient temperature POWER DISSIPATION / COLLECTOR POWER DISSIPTION : P D/PC (mW) AMBIENT TEMPERATURE : Ta (°C) −200406080201000 20 40 60 80 100 120 PD PC Parameter Cut-off frequency ∗ Non-coherent Infrared light emitting diode used.Peak light emitting wavelength Rise time Fall time Symbol VF IR ICEO λP λP IC fC VCE(sat) tr tf Min. − − − − 0.95 − − Typ. 1.3 − − 800 − − 10 Max. 1.6 10 0.5 − 4.95 0.4 − Unit VIF=50mA IF=50mA VR=5V VCE=10V − − VCE=5V, IF=20mA IF=20mA, IC=0.1mA VCC=5V, IF=20mA, RL=100Ω µA µA nm mA V µs −10−µs −1−MHz −950−nm Conditions Maximum sensitivity wavelengthλP−800−nm ∗ This product is not designed to be protected against electromagnetic wave. VCC=5V, IC=1mA, RL=100Ωtr tfResponse time−10−µs Forward voltage Reverse current Dark current Peak sensitivity wavelength Collector current Collector-emitter saturation voltage Response time Input charac- teristics Output charac- teristics Transfer characteristics Photo transistor Infrared light emitter diode d ParameterSymbol IC VCEO PD VR IF PC VECO Topr Tstg Limits −25 to +85 −30 to +85 50 5 80 30 4.5 30 80 Unit mA V mW V V mA mW °C °C Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature Input (LED) Output photo- transistor ( ) |
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| Following Datasheets | rpi-0226 (2 pages) rpi-1031 (2 pages) rpi-1040 (3 pages) rpi-1133 (2 pages) rpi-121 (2 pages) rpi-122 (2 pages) rpi-124 (2 pages) rpi-125 (2 pages) rpi-129b (3 pages) rpi-130 (3 pages) |
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