| Specifications | þÿ\000p\000c\000i\000m\000c\000h\000i\000n\000a\0000\0003\000p\000w\000r\000m\000o\000s\000d\000e\000\ s\000i\000g\000n\000.\000P\000D\000F þÿ\000a\000c\000o\000n\000n\000o\000r\0001 |
| Business section |
|
|
|
|
|
||||||||||||||||||||||||||||||||||
|
|
|
|
|
||||||||||||||||||||||||||||||||||
| Specifications | þÿ\000p\000c\000i\000m\000c\000h\000i\000n\000a\0000\0003\000p\000w\000r\000m\000o\000s\000d\000e\000\ s\000i\000g\000n\000.\000P\000D\000F þÿ\000a\000c\000o\000n\000n\000o\000r\0001 |
| Business section |
| Specifications | þÿ\000p\000c\000i\000m\000c\000h\000i\000n\000a\0000\0003\000p\000w\000r\000m\000o\000s\000d\000e\000\ s\000i\000g\000n\000.\000P\000D\000F þÿ\000a\000c\000o\000n\000n\000o\000r\0001 |
| Suggested Link Details/Purchase | |
| Content | V. COMPARISON OF SO-8 AND DIRECTFET VRM SWITCHING WAVEFORMS In order to highlight the effect of package parasitics on switching performance, the switching waveforms of the VRM using SO-8 MOSFETs and that of the VRM using DirectFET MOSFETs were observed. Figure 7 shows a captured waveform of an SO-8 device switching 30 amps. A similar waveform captured from a DirectFETTM device switching 30 amps is shown in figure 8. Figure 7. In circuit Vds switching waveforms of SO-8 packaged device Figure 8. In circuit Vds switching waveforms of DirectFETTM packaged device Comparing the waveforms in figure 7 and 8 it can be concluded that the DirectFETTM device produces considerably lower peak ringing voltages in circuit than that of the SO-8 device. Since the silicon in both packages is of the same active area and technology, it can be concluded that the difference is purely due to package parasitics. The higher ring for the SO-8 package is due to the fact that the inductance is much higher. VI. CONCLUSIONS The VRM designed using DirectFET MOSFETs was shown to be capable of operating at up to 2MHz/phase. Operating VRMs at higher frequencies enables the processor transient requirements to be met with a fewer number of output capacitors, thus saving board space as well as solution cost. There are several reasons for the success of DirectFET at high frequencies where other discrete packages would struggle. Besides the low package parasitics and thermal resistances, DirectFET MOSFETs offer the top side cooling which allows a much more compact design. This reduces PCB losses and contributes to the high efficiencies obtained at high operating frequencies. |
| Navigation | Previous Page / Next Page |
| Following Datasheets | pci_32_ds206_1 (13 pages) pci_64_ds205_1 (12 pages) PCN-1026_2 (1 pages) PCN-1027_2 (1 pages) PCN-1042_2 (2 pages) PCN-1084_2 (2 pages) PCN-2003-1028_2 (1 pages) PCN-2003-1029_2 (1 pages) pcn0005_1 (1 pages) pcn0404_2 (1 pages) |
Check in e-portals |
World-H-News Products Extensions Partners Automation Jet Parts |
| Sitemap Folder | group1 group2 group3 group4 group5 group6 group7 group8 group9 group10 group11 group12 group13 group14 group15 group16 group17 group18 group19 group20 group21 group22 group23 group24 group25 group26 group27 group28 group29 group30 group31 group32 group33 group34 group35 group36 group37 group38 group39 group40 group41 group42 group43 group44 group45 group46 group47 group48 group49 group50 group51 group52 group53 group54 group55 group56 group57 group58 group59 group60 group61 group62 group63 group64 group65 group66 group67 group68 group69 group70 group71 group72 group73 group74 group75 group76 group77 group78 group79 group80 group81 group82 group83 group84 group85 group86 group87 group88 group89 group90 group91 group92 group93 group94 group95 group96 group97 group98 group99 group100 Prewious Folder Next Folder |
