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| Content | DirectFETTM Power MOSFET Packaging Technology Enables Discrete Multiphase Converter Design Capable of up to 2MHz/phase Operation Ralph Monteiro, Carl Blake and Jason Chiu International Rectifier 233 Kansas Street, El Segundo, CA 90245 as presented at PCIM China, March 2003 Abstract VRM designers have adopted multiphase topologies for several years now in order to meet the CPU transient response and high current requirements. As the requirements continue to increase, operating frequencies of over 1MHz/phase will not be uncommon. Operating power MOSFET devices at frequencies over 1MHz will pose significant challenges to established power electronic packages such as the DPAK and wirebonded SO-8 devices. This paper describes the design and performance of a VRM designed using DirectFET? MOSFETs designed to address this problem. The VRM demonstrated efficiencies above 80% at frequencies of up to 2 MHz/phase and 20A/phase. I. INTRODUCTION Next generation microprocessors operate at voltages approaching 1V and escalating frequencies. Current requirements are increasing rapidly, increasing the need for very fast transient response. Transient response has increased from 20A per microsecond to about 325A per microsecond since 1999, and is projected to grow to 400A per microsecond by next year. To address these challenges and shrink the large capacitor banks that would be required, buck converters must operate at frequencies in the 1-2MHz range. At such high frequencies switching losses become critical due to PCB trace inductance and power package parasitics. Various manufacturers have introduced new surface mount packages targeted at reducing package parasitics. One such package is the DirectFET MOSFET from International Rectifier. The unique construction of the DirectFET MOSFET power package offers improvements in both the package parasitics while enabling innovative thermal solutions that reduce footprint size and layout parasitics. This paper discusses the design of a high current VRM capable of operating at up to 2Mhz/phase at over 80% efficiency using a discrete design. This has lead industry experts to believe that only an integrated solution could ever reach such switching frequencies. II. DIRECTFET MOSFET CONSTRUCTION DirectFET packaging has a unique construction that provides breakthroughs in package parasitics and heat dissipation capabilities, dramatically increasing efficiency and current carrying capacity of the device. (a) (b) Fig. 1. DirectFET Packaging (a) Cross Section (b) Photograph showing bottom side of passivated die. Figure 1 shows the DirectFET package applied to a MOSFET die. The silicon die is encapsulated into a copper housing. The bottom of the package consists of a die specifically designed with source and gate contact pads that can be soldered directly to the PCB. A proprietary passivation system on the silicon die isolates the gate and the source pads to prevent shorting and acts as a solder mask when the device copper track on board copper ‘drain’ clip passivated die die attach material gate connection source connection |
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| Following Datasheets | pci_32_ds206_1 (13 pages) pci_64_ds205_1 (12 pages) PCN-1026_2 (1 pages) PCN-1027_2 (1 pages) PCN-1042_2 (2 pages) PCN-1084_2 (2 pages) PCN-2003-1028_2 (1 pages) PCN-2003-1029_2 (1 pages) pcn0005_1 (1 pages) pcn0404_2 (1 pages) |
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