RF-CMOS performance trends - Electron Devices, IEEE Transactions on

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1776IEEETRANSACTIONSONELECTRONDEVICES,VOL.48,NO.8,AUGUST2001 RF-CMOSPerformanceTrends PierreH.Woerlee,MathijsJ.Knitel,Ronaldv

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Content	1776IEEETRANSACTIONSONELECTRONDEVICES,VOL.48,NO.8,AUGUST2001 RF-CMOSPerformanceTrends PierreH.Woerlee,MathijsJ.Knitel,RonaldvanLangevelde,Member,IEEE,DirkB.M.Klaassen,LuukF.Tiemeijer, AndriesJ.Scholten,andAdrieT.A.Zegers-vanDuijnhoven Abstract—Theimpactofscalingontheanalogperformanceof MOSdevicesatRFfrequencieswasstudied.TrendsintheRFper- formanceofnominalgatelengthNMOSdevicesfrom350-nmto 50-nmCMOStechnologiesarepresented.Bothexperimentaldata andcircuitsimulationswithanadvancedvalidatedcompactmodel (MOSModel11)havebeenusedtoevaluatetheRFperformance. RFperformancemetricssuchasthecutofffrequency,maximum oscillationfrequency,powergain,noisefigure,linearity,and1 noisewereincludedintheanalysis.Thefocusofthestudywas ongateanddrainbiasconditionsrelevantforRFcircuitdesign. AscalingmethodologyforRF-CMOSbasedonlimitedlinearity degradationisproposed. IndexTerms—CMOSintegratedcircuits,MOSdevices,mod- eling,radiofrequency. I.INTRODUCTION T HEscalingofCMOShasresultedinastrongimprove- mentintheRFperformanceofMOSdevices[1],[2],[15]. Consequently,CMOShasbecomeaviableoptionforanalogRF applicationsandRFsystem-on-chip.Performancemetricssuch ascutofffrequency,maximumoscillationfrequency,andmin- imumnoisefigurehavebeenstudiedwidely[1],[2],[8].How- ever,trendsinlargesignalperformance(linearity)andlow-fre- quencynoisearenotwellknown.Linearityandnoisearekey parametersforRFcircuitssuchaslow-noiseamplifiers(LNAs). Low-frequencynoiseisimportantforthephasenoiseofRFcir- cuitssuchasvoltage-controlledoscillators(VCOs).Phasenoise andlinearityspecificationsaresevereforfuturewide-bandcom- municationsystems. Theemphasisofpreviouswork[1],[8]wasonthemaximum orminimumvaluesoftheRFparameters,i.e.,powerconsump- tionwasneglected.However,forcircuitapplications,theRF performanceatlowgatebias(i.e.,justabovethreshold)ismore important.TrendsintheRFperformance,noise,andlin- earityatsuchbiasconditionsarenotwellknown.First-order equationsfortheRFfiguresofmerit(FOM)arenotsuitedto predicttheRFperformanceatarbitrarybiasconditions.Instead, amoreappropriatemethodwouldbetousecircuitsimulation withavalidatedcompactmodel.AdetailedstudyofthekeyRF performancemetricsincludingnoiseandlinearityatbiascon- ditionswhicharerelevantforRFcircuitdesignisneeded. Inthispaper,theRFperformanceofnominalgatelength NMOSdevicesfrom350-nmto50-nmCMOStechnologies isstudiedatbiasconditionsrelevantforRFdesign(i.e.,satu- ManuscriptreceivedDecember15,2000;revisedMarch9,2001.Thereview ofthispaperwasarrangedbyEditorG.Baccarani. TheauthorsarewiththePhilipsResearchLaboratories,5656AA,Eindhoven, TheNetherlands(e-mail:pierre.woerlee@philips.com). PublisherItemIdentifierS0018-9383(01)05728-8. rationconditionsandgatebiasnearthreshold).Experimental resultsincludingRFFOMsuchasthecutofffrequency, maximumoscillationfrequency,maximumstablegain ,minimumnoisefigure,linearity,and noiselevelarepresentedforthreeindustrialCMOStech- nologieswithfeaturesizesof350nm,250nm,and180nm. CircuitanddevicesimulationresultsfortheRFdeviceperfor- mancearepresentedfornominalgatelengthNMOSdevices fromCMOStechnologieswithfeaturesizedownto50nm.A validatedcompactmodel(MOSModel11)[3],[5],[6]isused forpredictionoftheRFperformancetrends.Thismodelhas beenespeciallydevelopedtogiveanaccuratedescriptionofthe linearity.Itiswellsuitedfordigital,analog,andRFsimulation. InSectionVII,ascalingmethodologyforRF-CMOSforlim- itedlinearitydegradationispresented. II.RFFIGURESOFMERIT First-orderequationsfortheRFFOMsuchasthecutoff frequency,themaximumoscillationfrequencybased onthemaximumavailablegain(MAG),minimumnoisefigure ,andthirdharmonicinterceptvoltagearegiven below[4] (1) (2) (3) (4) whereisthetransconductance;isthethird-orderderiva- tiveofthedraincurrentversusgatebias;andistheextrap- olatedinputvoltageamplitudeatwhichthefirst-andthird-order outputamplitudesareequal.Thecapacitances, andaretheintrinsicinputcapacitance,parasiticgate-bulk capacitance,andthegate-sourceandgate-drainoverlapcapac- itances.isthegateresistanceandistherealpartofthe inputimpedanceduetononquasistaticeffects.andare thesourceseriesresistanceandoutputconductance.Theabove equationsgiveanindicationoftheimpactoftechnologypa- rametersontheRFFOM.ForlinearityFOMisusedasa first-orderparameter,alargeisrequiredforhighlinearity. iseasilyobtainedfromthedccharacteristics.Itgivesa goodindicationofthedevicelinearityevenathighfrequency 0018–9383/01$10.00©2001IEEE
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